standard avalanche sinterglass diode s330d vishay semiconductors www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86053 168 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.6, 25-aug-10 mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed package ? controlled avalanche characteristics ? low reverse current ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? high voltage ?power supplies 949539 parts table part type differentiation package s330d v r = 1000 v; i fav = 2 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics s330d v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 50 a average forward current t amb = 50 c, i = 10 mm i fav 2a pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, inductive load e r 20 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max unit forward voltage i f = 1 a v f --1v i f = 10 a v f --1.65v reverse current v r = v rrm i r --5a v r = v rrm , t j = 100 c i r - - 50 a breakdown voltage i r = 100 a v (br)r 1300 - - v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr --4s
s330d standard avalanche sinterglass diode vishay semiconductors document number: 86053 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.6, 25-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 169 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - typ. thermal resistance vs. lead length fig. 2 - max. average forward current vs. ambient temperature fig. 3 - reverse current vs. junction temperature fig. 4 - diode capacitance vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - max. reverse power dissipat ion vs. junction temperature 0 5 10 15 20 25 30 0 20 40 60 80 120 r thja - thermal re s i s t. junction/ambeint (k/w) i - lead length (mm) 949090 100 ll t l = con s tant 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) i fav - average forward current (a) r thja = 45 k/w i = 10 mm 17212 25 50 75 100 125 150 1 10 1 00 1000 10 000 175 17213 i r (a) t j (c) c d (pf) 0.1 1 10 100 10 5 15 20 25 30 35 0 40 v r (v) 17214 t 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v f (a) i f (a) 17215 t j = 175 c t j = 25 c 0 0.05 0.1 0.15 0.2 0.25 0.3 25 50 75 100 125 150 175 t j (c) 17216 p (w) r 0.35 0.4 0.45 0.5 p r - limit at 100 % v r p r - limit at 80 % v r
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86053 170 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.6, 25-aug-10 s330d vishay semiconductors standard avalanche sinterglass diode package dimensions in millimeters (inches): sod-57 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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